| Basic technical parameters |
| Laser type |
diode (semiconductor) laser |
| Probe types |
A - multidiode surface probe
B - point probe |
| Wavelength |
Probe A: 650nm, red beam, the best for treatment of surface diseases
Probe B: 820nm, near IR beam, the best for deep-seated indications |
| Operation mode |
Continuous wave (c.w.), radiation can be modulated up to 10000Hz in probe B |
| Radiation power on tissue |
Probe A: 10 diodes, with 10mW each in basic version
Probe B: regulated in the range 0÷200mW in basic version |
| Laser controller |
built-in microprocessor |
| Displayed functions |
probe type radiation power [mW]
energy dose [J]
therapy time duration [min., sec.]
frequency of modulation [Hz] |
| Additional accessories |
protective spectacles and goggles, robust carrying case, interchangeable and heat-resistant tips with different shapes and sizes |
| Power supply |
single phase, (220-230)V, 50Hz |
| Power consumption |
<18W |
| Controller size |
170mm x 275mm x 110mm |
| Weight |
2kg |
| Safty |
laser made according to the international
standards IEC 601.1 i IEC 825. It is equipped with: target indicator,
built-in power meter, remote interlock connection and key switch. |
